Gas-Sensitive Material for Semiconductor Hydrogen Sulfide Sensor

Abstract

In this work, the synthesis of porous silica gas-sensitive materials for semiconductor sensors of hydrogen sulfide is presented. As a result of studying the activity and selectivity of individual and binary oxides in the oxidation of combustible gases, the composition of the catalyst (10CuO + 90WO₃) for the gas-sensitive element of the H₂S sensor was selected. The selected catalysts ensure high semiconductor sensor (SCS) selectivity in a wide range of temperatures and H2S concentrations. The optimal ratio of the initial components for the synthesis of silica gas-sensitive materials for a semiconductor hydrogen sulfide sensor has been selected. It has been established that the period of maturation of the film-forming solution based on tetraethoxysilane (TEOS) is 6.5 hours, the period that ensures the production of gas-sensitive films is 18.5 days, and the aging period is 3.5 days. It was found that an increase in the process temperature from 20 to 40°C with a slight change in the viscosity of the solution leads to a sharp reduction in the stability time of the solution from 18.5 to 7.5 days