Gas-Sensitive Material for Semiconductor Hydrogen Sulfide Sensor

  • Otabek Artikovich Kuchkarov SamDU
  • Begmatov Rizamat
  • Abdurakhmanov Ilkhom

Abstract

In this work, the synthesis of porous silica gas-sensitive materials for semiconductor sensors of hydrogen sulfide is presented. As a result of studying the activity and selectivity of individual and binary oxides in the oxidation of combustible gases, the composition of the catalyst (10CuO + 90WO3) for the gas-sensitive element of the H2S sensor was selected. The selected catalysts ensure high semiconductor sensor (SCS) selectivity in a wide range of temperatures and H2S concentrations. The optimal ratio of the initial components for the synthesis of silica gas-sensitive materials for a semiconductor hydrogen sulfide sensor has been selected. It has been established that the period of maturation of the film-forming solution based on tetraethoxysilane (TEOS) is 6.5 hours, the period that ensures the production of gas-sensitive films is 18.5 days, and the aging period is 3.5 days. It was found that an increase in the process temperature from 20 to 40°C with a slight change in the viscosity of the solution leads to a sharp reduction in the stability time of the solution from 18.5 to 7.5 days.

Published
Dec 22, 2023
How to Cite
KUCHKAROV, Otabek Artikovich; RIZAMAT, Begmatov; ILKHOM, Abdurakhmanov. Gas-Sensitive Material for Semiconductor Hydrogen Sulfide Sensor. Pakistan Journal of Analytical & Environmental Chemistry, [S.l.], v. 24, n. 2, p. 125-134, dec. 2023. ISSN 2221-5255. Available at: <https://pjaec.pk/index.php/pjaec/article/view/957>. Date accessed: 23 june 2024. doi: http://dx.doi.org/10.21743/PJAEC/2023.12.01.